NPD-RD12
NPD-RD12 optoQFN Silicon PD Array;Chip NSPD-RD12,Packaged NPD-RD12.
Specification Snapshot
Forward Voltage Drop V_F [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell; I_F=20mA]
min:0.4 V
Dark Current I_D [Electro-optical Characteristics; Ta=25°C; Photodiode in Each Cell; V_R=5V; E_v=0Lux]
max:100 nA
Spectral Response λ [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell]
min:450 nm; max:1050 nm
Peak Photosensitivity Wavelength λ_P [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell]
typical:850 nm
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Overview
NPD-RD12 optoQFN Silicon PD Array;Chip NSPD-RD12,Packaged NPD-RD12.
Specifications
| Parameter | Value |
|---|---|
| Forward Voltage Drop V_F [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell; I_F=20mA] | min:0.4 V |
| Reverse Voltage V_R [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell; I_R=100μA] | min:30 V |
| Open-Circuit Voltage V_OC [Electro-optical Characteristics;Ta=25°C;Photodiode in Each Cell;E_v=1000Lux;CIE Standard Illuminant A,2856K Tungsten Lamp] | typical:0.4 V |
| Dark Current I_D [Electro-optical Characteristics; Ta=25°C; Photodiode in Each Cell; V_R=5V; E_v=0Lux] | max:100 nA |
| Photocurrent I_L [Electro-optical Characteristics;Ta=25°C;Photodiode in Each Cell;V_R=5V;E_v=1000Lux;CIE Standard Illuminant A,2856K Tungsten Lamp] | typical:4 μA |
| Spectral Response λ [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell] | min:450 nm; max:1050 nm |
| Peak Photosensitivity Wavelength λ_P [Electro-Optical Characteristics; Ta=25°C; Photodiode of Each Cell] | typical:850 nm |
Applications
Optical Encoder
Key Features
12-Element Photodiode Array;Thermal Pad Nonpolar,Must Be Shorted to Cathode in Use
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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