NPD2255 Dual-Area PD
NPD2255 is a receiver custom-developed for background-suppression (BGS) sensors. It has two asymmetric photosensitive regions that effectively define responsive and nonresponsive areas, or working and suppression zones. Other asymmetric Dual PD options are available: NPD2235: 1.3×1.0 + 1.3×2.5; NPD2255: 1.0×1.5 + 1.0×4.0; NPD2233: 1.0×3.3, comprising two joined triangles. No dimensional unit is supplied in this description.
Specification Snapshot
Power Consumption P_D [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell]
150 mW
Operating Temperature Topr. [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell]
-25~+85 °C
Storage Temperature Tstg. [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell]
-40~+100 °C
Forward Voltage Drop V_F [Reference;Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;PD1;I_F=20mA]
min:0.4 V
Capacitance Ct [Reference;Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;PD1;V_R=5V;f=1MHZ;E=0mW/cm²]
typical:55 pF
Forward Voltage Drop V_F [Reference;Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;PD2;I_F=20mA]
min:0.4 V
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Overview
NPD2255 is a receiver custom-developed for background-suppression (BGS) sensors. It has two asymmetric photosensitive regions that effectively define responsive and nonresponsive areas, or working and suppression zones. Other asymmetric Dual PD options are available: NPD2235: 1.3×1.0 + 1.3×2.5; NPD2255: 1.0×1.5 + 1.0×4.0; NPD2233: 1.0×3.3, comprising two joined triangles. No dimensional unit is supplied in this description.
Specifications
| Parameter | Value |
|---|---|
| Power Consumption P_D [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | 150 mW |
| Reverse Voltage V_R [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | 30 V |
| Operating Temperature Topr. [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | -25~+85 °C |
| Storage Temperature Tstg. [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell] | -40~+100 °C |
| Soldering Temperature Tsol. [Reference; Maximum Ratings; Ta=25°C; Photodetector Characteristics of Each Cell; 2mm from Package Edge, No More Than 5 Seconds] | 260 °C |
| Forward Voltage Drop V_F [Reference;Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;PD1;I_F=20mA] | min:0.4 V |
| Photocurrent I_L [Reference;Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;PD1;E=1000Lux;CIE Standard Illuminant A,Chinese2856K Halogen Lamp/English2856K Tungsten Lamp] | typical:10 μA |
| Capacitance Ct [Reference;Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;PD1;V_R=5V;f=1MHZ;E=0mW/cm²] | typical:55 pF |
| Forward Voltage Drop V_F [Reference;Electro-optical Characteristics;Ta=25°C;Photosensitive Device per Cell;PD2;I_F=20mA] | min:0.4 V |
| Photocurrent I_L [Reference;Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;PD2;E=1000Lux;CIE Standard Illuminant A,Chinese2856K Halogen Lamp/English2856K Tungsten Lamp] | typical:27 μA |
| Capacitance Ct [Reference;Electro-optical Characteristics;Ta=25°C;Characteristics of Each Photosensitive Cell;PD2;V_R=5V;f=1MHZ;E=0mW/cm²] | typical:75 pF |
| Dark Current I_D [Reference; Electro-Optical Characteristics; Ta=25°C; Photodetector Characteristics of Each Cell; V_R=10V; E=0mW/cm²] | max:100 nA |
| Reverse Breakdown Voltage V_R [Reference; Electro-Optical Characteristics; Ta=25°C; Photodetector Characteristics of Each Cell; I_R=10μA; E=0mW/cm²] | min:30 V |
| Spectral Response λ [Reference; Electro-Optical Characteristics; Ta=25°C; Photodetector Characteristics of Each Cell] | min:400 nm; max:1100 nm |
| Peak Sensing Wavelength λ_P [Reference; Electro-Optical Characteristics; Ta=25°C; Photodetector Characteristics of Each Cell] | typical:700 nm |
Applications
High-Speed Photodetector
Key Features
Double Photosensitive Window; Visible Light Enhancement Technology
Datasheet
Product Datasheet
PDF
Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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