NIR-V2306T Dual-Channel Photoelectric Switch
Specification Snapshot
Dimensions [Independent Features on Page 1; Not a Dimension Drawing]
5.65 mm × 4.0 mm × 5.65 mm
Forward Voltage Drop V_F [Electro-Optical Characteristics; Ta=25°C; Input Side; I_F=20mA]
min:1.0 V; typical:1.2 V; max:1.4 V
Peak Wavelength λ_P [Electro-Optical Characteristics; Ta=25°C; Input Side; I_F=15mA]
typical:940 nm
Dark Current I_CEO [Electro-Optical Characteristics; Ta=25°C; Output Side; E_V=0lx; V_CE=20V]
typical:1.0 nA; max:100 nA
Collector Current I_C [Electro-Optical Characteristics; Ta=25°C; Transfer Characteristics; I_F=15mA; V_CE=5V]
min:0.3 mA; typical:0.7 mA
Saturation Voltage V_CE(SAT) [Electro-Optical Characteristics; Ta=25°C; Transfer Characteristics; I_C=0.05mA; I_F=15mA]
max:0.4 V
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Specifications
| Parameter | Value |
|---|---|
| Dimensions [Independent Features on Page 1; Not a Dimension Drawing] | 5.65 mm × 4.0 mm × 5.65 mm |
| Gap Spacing [Independent Features on Page 1] | 3.0 mm |
| Slit [Independent Features on Page 1; Emitting Section 0.8mm] | 0.3 mm |
| Moisture Sensitivity Level MSL | Grade 1 |
| Forward Voltage Drop V_F [Electro-Optical Characteristics; Ta=25°C; Input Side; I_F=20mA] | min:1.0 V; typical:1.2 V; max:1.4 V |
| Reverse Current I_R [Electro-Optical Characteristics; Ta=25°C; Input Side; V_R=5V] | max:10 μA |
| Peak Wavelength λ_P [Electro-Optical Characteristics; Ta=25°C; Input Side; I_F=15mA] | typical:940 nm |
| Dark Current I_CEO [Electro-Optical Characteristics; Ta=25°C; Output Side; E_V=0lx; V_CE=20V] | typical:1.0 nA; max:100 nA |
| Collector Current I_C [Electro-Optical Characteristics; Ta=25°C; Transfer Characteristics; I_F=15mA; V_CE=5V] | min:0.3 mA; typical:0.7 mA |
| Saturation Voltage V_CE(SAT) [Electro-Optical Characteristics; Ta=25°C; Transfer Characteristics; I_C=0.05mA; I_F=15mA] | max:0.4 V |
| Rise Time tr [Electro-Optical Characteristics; Ta=25°C; Conversion Characteristics; V_CE=5V; I_C=0.3mA; R_L=100Ω] | typical:20 μs; max:150 μs |
| Fall Time tf [Electro-Optical Characteristics; Ta=25°C; Conversion Characteristics; V_CE=5V; I_C=0.3mA; R_L=100Ω] | typical:30 μs; max:150 μs |
| HBM Test Conditions [One Forward/Reverse Discharge per Voltage; Chinese1500V Note Says+1500V, Table/English Say±1500V, Each Retained] | ±500V、±1000V、±1500V、±2000V |
| CDM Test Conditions [This Voltage Applied 3 Times in Each Forward and Reverse Direction] | ±2000V |
| Forward Current I_F [Maximum Ratings; Ta=25°C; Input End] | 50 mA |
| Reverse Voltage V_R [Maximum Ratings; Ta=25°C; Input End] | 6 V |
| Pulsed Forward Current I_FP [Maximum Ratings; Ta=25°C; Input Side; Period 1ms; Maximum Pulse Width 0.1ms] | 500 mA |
| Power Consumption P_D [Maximum Ratings; Ta=25°C; Input End] | 75 mW |
| Collector Current I_C [Maximum Ratings; Ta=25°C; Output End] | 20 mA |
| Collector-Emitter Voltage V_CEO [Maximum Ratings; Ta=25°C; Output End] | 30 V |
| Emitter-Collector Voltage V_ECO [Maximum Ratings; Ta=25°C; Output End] | 5 V |
| Collector Power Dissipation P_C [Maximum Ratings; Ta=25°C; Output End] | 75 mW |
| Operating Temperature Topr. [Maximum Ratings; Ta=25°C; Common] | -40~+105 °C |
| Storage Temperature Tstg. [Maximum Ratings; Ta=25°C; Common] | -40~+105 °C |
| Soldering Temperature Tsol. [Maximum Ratings; Ta=25°C; Common; Maximum Duration 5s] | 255±5 |
| Recommended Solder-Paste Melting Point [Independent Text Outside Curves on Page 6; Solder Paste Conditions, Not Product Temperature Ratings] | 245~255 °C |
| Recommended Solder-Paste Composition [Independent Text Outside Curves on Page 6] | Lead-Free / Pb-Free |
| Recommended Stencil Thickness [Stencil Printing Process; Independent Text Outside Curves on Page 6] | 0.12~0.2 mm |
| Quantity per Package [Independent Text on Page 7] | 2000 pcs/reel |
| Carrier Tape [Note on Page 7] | Black Conductive Polystyrene (Source English: Black Conductive Polystyene) |
| Cover Tape [Note on Page 7] | Polyethylene |
Applications
Automotive Gearshift,Air-Conditioning and Volume Knobs;Printers;Motor Control;Ticket Vending Machines;Car Knobs;Position Encoders;General Object-Presence/Motion Detection
Key Features
Surface-Mount;Reliable,Long Life;Automotive AEC-Q102;Dual Optical Paths for Direction/Speed;RoHs;MSL1;Disk Advice:Gap1.8mm/Constant Offset0.9mm;64 Cycles,Circumference64×3.6=230.4mm,Source Diameter~73mm;Example:0.6mm Transmitting/0.5mm Blocking,64 Cycles,Diameter~22mm;Smaller Disks Supported Without High-Precision Output;Separate Page5 Design Advice,Not Fixed Product Dimensions
Datasheet
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Supplier Information
Shanghai Enbi Technology Co., Ltd., founded in 2016, focuses on optoelectronic technology R&D and production. Based on optoelectronic semiconductor discrete devices, it integrates optics, MEMS, electronics, microelectronics, semiconductor optoelectronic IC technologies, covering components, optoelectronic ICs, sensor modules, with full capability from chip design to module mass production, holding independent IP and unique testing systems. The company has an excellent management team and skilled staff, rich industry experience, strong R&D, efficient mass production and strict quality control, providing high-performance, reliable, cost-effective products; for special applications, we offer optimal optoelectronic solutions and custom products. Since its establishment, the company insists on independent innovation, quality first, continuously launching innovative products widely used in industrial equipment, automotive electronics, laser ranging, healthcare, instrumentation, security monitoring, smart home, etc., with performance replacing high-end foreign brands. Enbi Technology actively deploys in IoT, intelligent society, AI, driving industry upgrades, aiming to become a high-end optoelectronic brand.
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