Broadband Terahertz Emission Module BTEM-B

Broadband Terahertz Emission Module BTEM-B

Supplier
Thz-chip
Part Number
BTEM-B
Category
Terahertz
Origin
China

The broadband THz emitter module is optimized for high-frequency generation using ultrathin ZnTe or BNA. Crystal thickness, pump duration, spot and phase matching are optimized to reduce absorption/propagation mismatch limiting high frequencies. Wider usable coverage combines with electro-optic sampling, dry paths and fast delay scanning for molecular vibrations, lattice dynamics, ultrafast semiconductors and broadband-device tests. Ultrashort pumping creates transient second-order polarization; thinner crystals reduce absorption/velocity mismatch, retaining higher-frequency output. Pump energy, focus and thickness balance bandwidth and intensity.

Specification Snapshot
Emitter Crystal
BNA
Crystal Thickness
0.10-0.30mm
Recommended Pump Wavelength
800nm / 1.0-1.5 micrometer
Recommended Pump Pulse Width
<=100fs
Typical Effective Bandwidth
0.1-7THz
Clear Aperture
2-6mm
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Overview

The broadband THz emitter module is optimized for high-frequency generation using ultrathin ZnTe or BNA. Crystal thickness, pump duration, spot and phase matching are optimized to reduce absorption/propagation mismatch limiting high frequencies. Wider usable coverage combines with electro-optic sampling, dry paths and fast delay scanning for molecular vibrations, lattice dynamics, ultrafast semiconductors and broadband-device tests. Ultrashort pumping creates transient second-order polarization; thinner crystals reduce absorption/velocity mismatch, retaining higher-frequency output. Pump energy, focus and thickness balance bandwidth and intensity.

Specifications

ParameterValue
Emitter CrystalBNA
Crystal Thickness0.10-0.30mm
Recommended Pump Wavelength800nm / 1.0-1.5 micrometer
Recommended Pump Pulse Width<=100fs
Typical Effective Bandwidth0.1-7THz
Clear Aperture2-6mm
Recommended EnvironmentHumidity-Controlled Package / Nitrogen
OutputTime-Domain Pulse / Broadband Spectrum

Applications

Broadband THz-TDS;Molecular/Lattice Vibrations;Semiconductor Carrier Dynamics;Ultrafast Spectroscopy;Multi-THz Device/New Material Research

Key Features

High-Frequency Extension with Ultrathin ZnTe50um or BNA;Multi-THz Effective Spectrum for Broadband Electro-Optic Sampling;Precision Ultrathin-Crystal Packaging Reduces Stress/Maintains Axis Alignment;Optional800nm/Near-IR Pump;Reference Time Waveforms,Spectra and System-Matching Advice;Options:Thickness,Doping,Pump Band,Optomechanics,Collimation,Filters,Nitrogen Protection,Bandwidth Calibration

Datasheet

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Supplier Information

Th
Thz-chip
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Xi'an Taihe Dixin Technology Co., Ltd. is a technology enterprise established through the transformation of achievements from the State Key Laboratory of Solidification Processing and the Key Laboratory of Radiation Detection Materials and Devices of the Ministry of Industry and Information Technology at Northwestern Polytechnical University. The company focuses on the growth of electro-optic crystals for terahertz (THz) wave generation and detection, high-energy ray and particle detection semiconductor crystals, and the design, preparation, and production of related devices, mastering core preparation technologies for advanced semiconductor crystal materials. Currently, it can produce large-size high-quality ZnTe crystals, organic semiconductor crystals BNA, perovskite crystals CsPbBr₃, neutron detection crystals 6LiInSe2, etc., and provide devices, systems, and testing solutions, offering a full-chain service of 'special functional crystals + core devices + intelligent equipment + solutions', empowering the high-quality development of industries such as aviation, aerospace, and nuclear energy.

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Broadband Terahertz Emission Module BTEM-B
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