Terahertz Emission Module TEM-Z

Terahertz Emission Module TEM-Z

Supplier
Thz-chip
Part Number
TEM-Z
Category
Terahertz
Origin
China

This THz emitter uses internally prepared intrinsic ZnTe, Mn-doped ZnTe, V-doped ZnTe and BNA crystals pumped by femtosecond lasers for broadband pulses. It integrates into THz-TDS/research paths. Crystal options emphasize different pump bands, spectra, output and material properties. Standard optomechanical interfaces and interchangeable crystals simplify upgrades, comparisons and multiband experiments. Second-order rectification in noncentrosymmetric crystals creates pulse-envelope-dependent polarization and THz radiation. Pump wavelength/duration/energy, thickness, orientation and phase matching determine spectra/intensity. Precision mounts and THz optics stabilize output.

Specification Snapshot
Emitter Crystal
Intrinsic ZnTe (Optional Doping)
Recommended Pump Wavelength
780-850nm
Recommended Pulse Width
<=120fs
Crystal Thickness
0.5-2.0mm
Typical Effective Bandwidth
0.1-3THz
Clear Aperture
3-20mm
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Overview

This THz emitter uses internally prepared intrinsic ZnTe, Mn-doped ZnTe, V-doped ZnTe and BNA crystals pumped by femtosecond lasers for broadband pulses. It integrates into THz-TDS/research paths. Crystal options emphasize different pump bands, spectra, output and material properties. Standard optomechanical interfaces and interchangeable crystals simplify upgrades, comparisons and multiband experiments. Second-order rectification in noncentrosymmetric crystals creates pulse-envelope-dependent polarization and THz radiation. Pump wavelength/duration/energy, thickness, orientation and phase matching determine spectra/intensity. Precision mounts and THz optics stabilize output.

Specifications

ParameterValue
Emitter CrystalIntrinsic ZnTe (Optional Doping)
Recommended Pump Wavelength780-850nm
Recommended Pulse Width<=120fs
Crystal Thickness0.5-2.0mm
Typical Effective Bandwidth0.1-3THz
Clear Aperture3-20mm
Output FormFree-Space THz
Mounting MethodFixed / Five-Axis Adjustment

Applications

Terahertz Time-Domain Spectroscopy; Optical Material Properties; Nonlinear Optics; THz Imaging/Device Evaluation; Ultrafast Spectroscopy/University Research and Teaching

Key Features

Optical-Rectification Emission Without External High Voltage,Simple/Repeatable;Compatible with800nm/Near-IR Femtosecond Systems;Thickness,Aperture,Crystal Cut Optimized for Pump;Integratable Filters,OAP Mirrors,Dry-Gas Protection;Standard Free-Space Optomechanics Directly Fit THz Time-Domain Systems;Options:Crystal,Doping,Thickness,Aperture,Pump Band,Mount,Filters,Collimation,Nitrogen Purge Box,System Calibration

Datasheet

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Supplier Information

Th
Thz-chip
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Xi'an Taihe Dixin Technology Co., Ltd. is a technology enterprise established through the transformation of achievements from the State Key Laboratory of Solidification Processing and the Key Laboratory of Radiation Detection Materials and Devices of the Ministry of Industry and Information Technology at Northwestern Polytechnical University. The company focuses on the growth of electro-optic crystals for terahertz (THz) wave generation and detection, high-energy ray and particle detection semiconductor crystals, and the design, preparation, and production of related devices, mastering core preparation technologies for advanced semiconductor crystal materials. Currently, it can produce large-size high-quality ZnTe crystals, organic semiconductor crystals BNA, perovskite crystals CsPbBr₃, neutron detection crystals 6LiInSe2, etc., and provide devices, systems, and testing solutions, offering a full-chain service of 'special functional crystals + core devices + intelligent equipment + solutions', empowering the high-quality development of industries such as aviation, aerospace, and nuclear energy.

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