690nm15mw Laser Diode QL68F6S-A/B/C-LS
QL68F6S-A/B/C-LS is a MOCVD grown 680nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 9mW and low operation current for optoelectronic devices such as
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P [Absolute Maximum Rating; Tc=25°C] | 15 mW |
| Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 2 V |
| Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 30 V |
| Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C] | −10 ~ +60 |
| Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C] | −40 ~ +85 |
| Threshold Current Ith [Tc=25°C] | min:12 mA; typical:18 mA; max:22 mA |
| Operating Current Iop [Tc=25°C; Po=9mW] | min:20 mA; typical:30 mA; max:40 mA |
| Operating Current Iop2 [Po=15mW, Tc=60℃] | max:58 mA |
| Slope Efficiency SE [Tc=25°C] | min:0.5 mW/mA; typical:0.85 mW/mA; max:1.2 mW/mA |
| Operating Voltage Vop [Tc=25°C; Po=9mW] | min:1.8 V; typical:2.3 V; max:2.6 V |
| Lasing Wavelength λp [Tc=25°C; Po=9mW] | min:670 nm; typical:680 nm; max:690 nm |
| Beam Divergence θ∥ [Tc=25°C; Po=9mW] | min:7 deg; typical:10 deg; max:13 deg |
| Beam Divergence θ⊥ [Tc=25°C; Po=9mW] | min:14 deg; typical:18 deg; max:22 deg |
| Beam Angle Δθ∥ [Tc=25°C; Po=9mW] | max:±2 deg |
| Beam Angle Δθ⊥ [Tc=25°C; Po=9mW] | max:±3 deg |
| Monitor Current Im [Tc=25°C; Po=9mW] | min:0.8 mA; typical:1.2 mA; max:1.6 mA |
| Optical Distance ΔX,ΔY,ΔZ [Tc=25°C] | max:±60 μm |
Applications
Key Features
Datasheet
Supplier Information
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