670nm5mw Laser Diode QL67D6S-A/B/C

670nm5mw Laser Diode QL67D6S-A/B/C

Supplier
Bu-laser
Part Number
QL67D6S-A/B/C
Category
Laser Diodes
Origin
China

QL67D6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader.

Specification Snapshot
Optical Output Power P [Absolute Maximum Rating; Tc=25°C]
7 mW
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]
−10 ~ +60
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]
−40 ~ +85
Optical Output Power Po [Tc=25°C]
typical:5 mW
Threshold Current Ith [Tc=25°C]
typical:40 mA; max:60 mA
Operating Current Iop [Tc=25°C; Po=5mW]
typical:50 mA; max:70 mA
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Overview

QL67D6S-A/B/C is a MOCVD grown 670nm band Gain-Guided type InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Bar Code Reader.

Specifications

ParameterValue
Optical Output Power P [Absolute Maximum Rating; Tc=25°C]7 mW
Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]2 V
Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]30 V
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]−10 ~ +60
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]−40 ~ +85
Optical Output Power Po [Tc=25°C]typical:5 mW
Threshold Current Ith [Tc=25°C]typical:40 mA; max:60 mA
Operating Current Iop [Tc=25°C; Po=5mW]typical:50 mA; max:70 mA
Operating Voltage Vop [Tc=25°C; Po=5mW]typical:2.3 V; max:2.6 V
Lasing Wavelength λp [Tc=25°C; Po=5mW]min:660 nm; typical:670 nm; max:680 nm
Beam Divergence θ∥ [Tc=25°C; Po=5mW]min:8 deg; typical:11 deg; max:15 deg
Beam Divergence θ⊥ [Tc=25°C; Po=5mW]min:24 deg; typical:32 deg; max:35 deg
Beam Angle Δθ∥ [Tc=25°C; Po=5mW]max:±1.5 deg
Beam Angle Δθ⊥ [Tc=25°C; Po=5mW]max:±2.5 deg
Monitor Current Im [Tc=25°C; Po=5mW]min:0.1 mA; typical:0.2 mA; max:0.5 mA
Astigmatism As [Tc=25°C]typical:30 μm
Optical Distance ΔX,ΔY,ΔZ [Tc=25°C]max:±60 μm

Applications

Optical Leveler Laser Module Bar Code Reader

Key Features

Visible Light Output : λp = 670 nm Optical Power Output : 5mW CW Package Type : TO-18 (5.6mmφ) Built-in Photo Diode for Monitoring Laser Diode

Datasheet

Product Datasheet
PDF
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Supplier Information

Bu
Bu-laser
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Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life! The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications. We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.

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670nm5mw Laser Diode QL67D6S-A/B/C
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