660nm100mw Laser Diode QL65O5S-A/B/C

660nm100mw Laser Diode QL65O5S-A/B/C

Supplier
Bu-laser
Part Number
QL65O5S-A/B/C
Category
Laser Diodes
Origin
China

QL65O5S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 100mW and pulse 230mW - for optical storage devices such as High Power Laser Modules.

Specification Snapshot
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]
−10 ~ +50
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]
−40 ~ +80
Threshold Current Ith [Tc=25°C; CW]
typical:75 mA; max:100 mA
Operating Current Iop [Tc=25°C; CW, Po=100mW]
typical:180 mA; max:200 mA
Operating Voltage Vop [Tc=25°C; CW, Po=100mW]
min:2.0 V; typical:2.5 V; max:3.0 V
Peak Wavelength λp [Tc=25°C; CW, Po=100mW]
min:654 nm; typical:660 nm; max:666 nm
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Overview

QL65O5S-A/B/C is a MOCVD grown 660nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of CW 100mW and pulse 230mW - for optical storage devices such as High Power Laser Modules.

Specifications

ParameterValue
Optical Output Power ( CW ) Po [Absolute Maximum Rating; Tc=25°C]100 mW
Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]2 V
Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C]30 V
Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C]−10 ~ +50
Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C]−40 ~ +80
Threshold Current Ith [Tc=25°C; CW]typical:75 mA; max:100 mA
Operating Current Iop [Tc=25°C; CW, Po=100mW]typical:180 mA; max:200 mA
Operating Voltage Vop [Tc=25°C; CW, Po=100mW]min:2.0 V; typical:2.5 V; max:3.0 V
Peak Wavelength λp [Tc=25°C; CW, Po=100mW]min:654 nm; typical:660 nm; max:666 nm
Slope Efficiency SE(η)d [Tc=25°C; CW, Po=100mW]min:0.7 W/A; typical:1.0 W/A; max:1.3 W/A
Beam Divergence θ∥ [Tc=25°C; CW, Po=100mW]min:7 °; typical:9 °; max:12 °
Beam Divergence θ⊥ [Tc=25°C; CW, Po=100mW]min:15 °; typical:18 °; max:21 °
Beam Angle ∆θ∥ [Tc=25°C; CW, Po=100mW]max:±3 °
Beam Angle ∆θ⊥ [Tc=25°C; CW, Po=100mW]max:±3 °
Monitor Current Im [Tc=25°C; CW, Po=100mW]min:0.05 mA; typical:0.50 mA; max:1.50 mA

Applications

High Power Laser Modules Medical Applications Portable High Density Optical Disc Drives

Key Features

Visible Light Output : λp = 660 nm Optical Power Output : 100mW CW Package Type : TO-18 (5.6mmφ)

Datasheet

Product Datasheet
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Supplier Information

Bu
Bu-laser
View Supplier →
Dongguan BU-Laser Co., Ltd. was established in September 2010. It is a high-tech enterprise integrating R&D, production and sales of semiconductor lasers. With the business philosophy of "innovation, effectiveness, quality and service" and the purpose of winning the market together with customers, let technology change the way of life! The company owns its own brands "LANJI" and "VIAN", and has won the reputation of China's honest semiconductor laser supplier, with multiple patent certifications. We are a laser high-tech company located in Dongguan, with more than 20 production lines and a daily production capacity of 50,000 pieces. There are 68 automated equipment and 200 employees. We can design customized lasers according to customer requirements. A professional technical team and efficient after-sales service bring the best service to every customer and escort you.

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660nm100mw Laser Diode QL65O5S-A/B/C
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