640nm60mw Laser Diode QL63K4S-A/B/C-L
QL63K4S-A/B/C-L is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 60mW for optoelectronic devices such as Optical Leveler and Modules.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P [Absolute Maximum Rating; Tc=25°C] | 60 mW |
| Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 2 V |
| Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 30 V |
| Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C] | −10 ~ +40 |
| Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C] | −40 ~ +85 |
| Threshold Current Ith [Tc=25°C; QSI measuring apparatus] | typical:40 mA |
| Operating Current Iop [Tc=25°C; Po=60mW; QSI measuring apparatus] | typical:105 mA |
| Operating Voltage Vop [Tc=25°C; Po=60mW; QSI measuring apparatus] | typical:2.4 V; max:2.7 V |
| Lasing Wavelength λp [Tc=25°C; Po=60mW; QSI measuring apparatus] | min:633 nm; typical:640 nm; max:645 nm |
| Wallplug Efficiency 1 ηp [25°C; QSI measuring apparatus] | min:18 %; typical:24 % |
| Wallplug Efficiency 2 ηp [40°C; QSI measuring apparatus] | min:9 %; typical:17 % |
| Beam Divergence θ∥ [Tc=25°C; Po=60mW; QSI measuring apparatus] | min:7 deg; typical:11 deg; max:15 deg |
| Beam Divergence θ⊥ [Tc=25°C; Po=60mW; QSI measuring apparatus] | min:22 deg; typical:28 deg; max:33 deg |
| Beam Angle ∆θ∥ [Tc=25°C; Po=60mW; QSI measuring apparatus] | max:±2.0 deg |
| Beam Angle ∆θ⊥ [Tc=25°C; Po=60mW; QSI measuring apparatus] | max:±3.0 deg |
| Monitor Current Im [Tc=25°C; Po=60mW; QSI measuring apparatus] | min:0.01 mA; typical:0.3 mA; max:0.9 mA |
| Optical Distance ∆X,∆Y,∆Z [Tc=25°C; QSI measuring apparatus] | max:±60 µm |
Applications
Key Features
Datasheet
Supplier Information
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