638nm40mw Laser Diode QL63J5S-A/B/C-L
QL63J5S-A/B/C-L is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 40mW for optoelectronic devices such as Optical Leveler and Modules.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P [Absolute Maximum Rating; Tc=25°C] | 45 mW |
| Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 2 V |
| Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 30 V |
| Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C] | −10 ~ +50 |
| Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C] | −40 ~ +85 |
| Optical Output Power Po [Tc=25°C; Initial values; QSI measuring apparatus] | typical:40 mW |
| Threshold Current Ith [Tc=25°C; Initial values; QSI measuring apparatus] | typical:50 mA; max:80 mA |
| Operating Current Iop [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | typical:90 mA; max:120 mA |
| Operating Voltage Vop [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | typical:2.4 V; max:2.7 V |
| Lasing Wavelength λp [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | min:633 nm; typical:639 nm; max:645 nm |
| Beam Divergence θ∥ [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus; Full angle at half maximum] | min:8 deg; typical:10 deg; max:12 deg |
| Beam Divergence θ⊥ [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus; Full angle at half maximum] | min:14 deg; typical:18 deg; max:22 deg |
| Beam Angle Δθ∥ [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | max:±2.0 deg |
| Beam Angle Δθ⊥ [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | max:±3.0 deg |
| Monitor Current Im [Tc=25°C; Po=40mW; Initial values; QSI measuring apparatus] | min:0.01 mA; typical:0.3 mA; max:0.9 mA |
| Optical Distance ΔX,ΔY,ΔZ [Tc=25°C; Initial values; QSI measuring apparatus] | max:±60 μm |
Applications
Key Features
Datasheet
Supplier Information
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