635nm5mw Laser Diode QL63D5S-A/B/C
QL63D5S-A/B/C is a MOCVD grown 635nm band InGaAlP laser diode with quantum well structure. It's an attractive light source, with a typical light output power of 5mW for optoelectronic devices such as Optical Leveler and Modules.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Power P [Absolute Maximum Rating; Tc=25°C] | 6 mW |
| Laser Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 2 V |
| Photo Diode Reverse Voltage V [Absolute Maximum Rating; Tc=25°C] | 30 V |
| Operating Temperature Topr [Absolute Maximum Rating; Tc=25°C] | −10 ~ +50 |
| Storage Temperature Tstg [Absolute Maximum Rating; Tc=25°C] | −40 ~ +85 |
| Optical Output Power Po [Tc=25°C] | typical:5 mW |
| Threshold Current Ith [Tc=25°C] | typical:30 mA; max:40 mA |
| Operating Current Iop [Tc=25°C; Po=5mW] | typical:34 mA; max:50 mA |
| Operating Voltage Vop [Tc=25°C; Po=5mW] | typical:2.2 V; max:2.7 V |
| Lasing Wavelength λp [Tc=25°C; Po=5mW] | min:630 nm; typical:635 nm; max:640 nm |
| Beam Divergence θ∥ [Tc=25°C; Po=5mW] | min:6 deg; typical:8 deg; max:12 deg |
| Beam Divergence θ⊥ [Tc=25°C; Po=5mW] | min:28 deg; typical:34 deg; max:40 deg |
| Beam Angle ∆θ∥ [Tc=25°C; Po=5mW] | max:±1.5 deg |
| Beam Angle ∆θ⊥ [Tc=25°C; Po=5mW] | max:±2.5 deg |
| Monitor Current Im [Tc=25°C; Po=5mW] | min:0.1 mA; typical:0.15 mA; max:0.5 mA |
| Optical Distance ∆X,∆Y,∆Z [Tc=25°C] | max:±60 µm |
Applications
Key Features
Datasheet
Supplier Information
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