632nm700mw Laser Diode HL63193MG
The semiconductor 632nm laser diode can be fiber coupled to produce a red laser module with adjustable power and power stability <3%. Applications include simulation and experimental research on CCD interference effects. 1. Domestic brands: Huaguang and Huashang. 2. Sony. 3. Sharp.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical output power(1) (-10 to +30 oC) Po (1) [Absolute Maximum Ratings; -10 to+30°C] | 700 mW |
| Optical output power(2) (+30 to +40 oC) Po (2) [Absolute Maximum Ratings; +30 to+40°C] | 550 mW |
| Pulse optical output power Po(Pulse) [Absolute Maximum Ratings; Tc=25°C; Pulse frequency≥50Hz; duty≤33%] | 1000 mW |
| LD Reverse Voltage VR(LD) [Absolute Maximum Ratings; Tc=25°C] | 2 V |
| Operating Temperature Topr [Absolute Maximum Ratings; Tc=25°C] | -10 ~ +40 °C |
| Storage Temperature Tstg [Absolute Maximum Ratings; Tc=25°C] | -40 ~ +85 °C |
| Threshold current Ith [Tc=25°C] | typical:200 mA; max:250 mA |
| Operating current Iop [Tc=25°C; Po=700mW] | typical:820 mA; max:1000 mA |
| Operating voltage Vop [Tc=25°C; Po=700mW] | typical:2.2 V; max:2.6 V |
| Beam divergence Parallel to the junction θ// [Tc=25°C; Po=700mW, FWHM] | min:1 °; typical:9 °; max:20 ° |
| Beam divergence Perpendicular to the junction θ⊥ [Tc=25°C; Po=700mW, FWHM] | min:25 °; typical:35 °; max:45 ° |
| Lasing Wavelength λp [Tc=25°C; Po=700mW] | min:632 nm; typical:638 nm; max:643 nm |
Applications
Key Features
Datasheet
Supplier Information
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