630nm5mw Laser Diode
InGaAlP Double-Hetero Structure Red Visible Laser Diode With a Built-in P.D.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Optical Output Po [Absolute Maximum Ratings; Tc=25℃] | 6 mW |
| Reverse voltage LD Vr [Absolute Maximum Ratings; Tc=25℃] | 2 V |
| Reverse voltage PIN PD Vr(PD) [Absolute Maximum Ratings; Tc=25℃] | 20 V |
| Operating Temperature. Top [Absolute Maximum Ratings; Tc=25℃] | -10～40 ℃ |
| Storage Temperature. Tstg [Absolute Maximum Ratings; Tc=25℃] | -40～85 ℃ |
| Threshold current Ith [Tc=25℃; Case temperature; 100% inspection] | typical:23 mA; max:35 mA |
| Operating current Iop [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | typical:33 mA; max:45 mA |
| Operating voltage Vop [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | typical:2.2 V; max:2.7 V |
| Output efficiency η [Tc=25℃; Case temperature; 100% inspection; 2mW/(I(5mW)-I(3mW))] | min:0.2 mW/mA; typical:0.5 mW/mA; max:0.8 mW/mA |
| Monitor current Im [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | min:0.08 mA; typical:0.27 mA; max:0.40 mA |
| Beam divergence θ// [Tc=25℃; Case temperature; 100% inspection; Po=5mW; Full width at half maximum] | min:6 deg.; typical:8 deg.; max:12 deg. |
| Beam divergence θ⊥ [Tc=25℃; Case temperature; 100% inspection; Po=5mW; Full width at half maximum] | min:28 deg.; typical:33 deg.; max:40 deg. |
| Beam tolerance ⊿θ// [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | min:-2 deg.; typical:0 deg.; max:+2 deg. |
| Beam tolerance ⊿θ⊥ [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | min:-3 deg.; typical:0 deg.; max:+3 deg. |
| Emission point accuracy ⊿XYZ [Tc=25℃; Case temperature; 100% inspection] | min:-100 μm; typical:0 μm; max:+100 μm |
| Lasing wavelength λ [Tc=25℃; Case temperature; 100% inspection; Po=5mW] | min:630 nm; typical:635 nm; max:640 nm |
Applications
Datasheet
Supplier Information
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