850nm200mw Laser Diode 5450-J1
The 850nm laser diode is a compact semiconductor infrared emitter. It plays an important role in photoelectric sensing, including photodetectors, optical encoders and photoelectric switches. 1. Domestic brands: Huaguang and Huashang. 2. Sony. 3. Sharp.
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Overview
Specifications
| Parameter | Value |
|---|---|
| CW output power, kink-free Po [Laser Characteristics; 25°C; 0.6NA collection optics] | max:200 mW |
| Spectral width Δλ [Laser Characteristics; Emission bandwidth for90% integrated power] | typical:3 nm; max:5 nm |
| Slope efficiency ηD=Po/(Iop−Ith) [Laser Characteristics] | min:0.75 mW/mA; typical:0.85 mW/mA |
| Conversion efficiency η=Po/(IopVop) [Laser Characteristics] | typical:30 % |
| Emitting dimensions W×H [Laser Characteristics] | typical:3 µm × 1 µm |
| FWHM beam divergence Parallel to junction θ// [Laser Characteristics] | typical:9 degrees |
| FWHM beam divergence Perpendicular to junction θ⊥ [Laser Characteristics] | typical:30 degrees |
| Threshold current Ith [Laser Characteristics] | typical:35 mA; max:45 mA |
| Operating current Iop [Laser Characteristics] | typical:250 mA; max:300 mA |
| Series resistance Rs [Laser Characteristics] | typical:4.0 Ω; max:6.0 Ω |
| Thermal resistance Rth [Laser Characteristics] | typical:60 °C/W |
| Recommended case temperature Tc [Laser Characteristics] | min:-20 °C; max:30 °C |
| Operating voltage Vop [Laser Characteristics; typical formula from note4] | Vf=1.5V+Iop×Rs |
| Reverse voltage Vrl [Absolute Maximum Ratings] | max:3 V |
| Case operating temperature Top [Absolute Maximum Ratings] | min:-20 °C; max:50 °C |
| Storage temperature range Tstg [Absolute Maximum Ratings] | min:-40 °C; max:80 °C |
| Lead soldering temperature Tis [Absolute Maximum Ratings; 5sec.] | max:250 °C |
| Monitor Photodiode Sensitivity | min:0.1 µA/mW; max:20 µA/mW |
| Monitor Photodiode Capacitance | typical:6 pF |
| Monitor Photodiode Breakdown voltage Vbd | typical:25 V |
| Monitor Photodiode Operating voltage Vop | typical:10 V |
| Astigmatism [note6] | <5 µm |
Key Features
Datasheet
Supplier Information
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