1653-NTC
Dingxin Optoelectronics methane-detector chips for NTC packages have center1653.7nm at60℃ or custom wavelengths. Al-containing MQW active layers/ridge waveguides offer low threshold,high efficiency/reliability. Strict Certification before shipment ensures yield/quality.
Specification Snapshot
Threshold Current Ith [CW;Tc=65℃]
max:20 mA
Operating Voltage Vop [CW, Iop=50mA;Tc=65℃]
max:2 V
Center Wavelength λ [CW, Iop=50mA;Tc=65℃;Wavelengths are categorized into predefined bins.]
min:1652.9 nm; max:1655 nm
Side-mode Suppression Ratio SMSR [CW, Iop=50mA;Tc=65℃]
min:35 dB; typical:45 dB
Center Wavelength λ [Bin 1;Tc=65℃;Wavelengths are categorized into predefined bins.]
min:1653.4 nm; max:1653.6 nm
Center Wavelength λ [Bin 2;Tc=65℃;Wavelengths are categorized into predefined bins.]
min:1653.6 nm; max:1653.8 nm
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Overview
Dingxin Optoelectronics methane-detector chips for NTC packages have center1653.7nm at60℃ or custom wavelengths. Al-containing MQW active layers/ridge waveguides offer low threshold,high efficiency/reliability. Strict Certification before shipment ensures yield/quality.
Specifications
| Parameter | Value |
|---|---|
| Threshold Current Ith [CW;Tc=65℃] | max:20 mA |
| Optical Output Power [CW,Iop=50mA;Tc=65℃] | min:3 mW |
| Slope Efficiency SE [CW;Tc=65℃] | min:0.1 mW/mA; typical:0.2 mW/mA |
| Operating Voltage Vop [CW, Iop=50mA;Tc=65℃] | max:2 V |
| Center Wavelength λ [CW, Iop=50mA;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1652.9 nm; max:1655 nm |
| Wavelength Temperature Coefficient Δλ/ΔT [Tc=65℃] | typical:0.1 nm/°C |
| Wavelength Current Coefficient Δλ/ΔI [Tc=65℃] | typical:0.02 nm/mA |
| Side-mode Suppression Ratio SMSR [CW, Iop=50mA;Tc=65℃] | min:35 dB; typical:45 dB |
| Far-field Angle (FWHM) θ// [Tc=65℃] | typical:30 Deg |
| Far-field Angle (FWHM) θ⊥ [Tc=65℃] | typical:40 Deg |
| Center Wavelength λ [Bin 1;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1653.4 nm; max:1653.6 nm |
| Center Wavelength λ [Bin 2;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1653.6 nm; max:1653.8 nm |
| Center Wavelength λ [Bin 3;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1653.8 nm; max:1654 nm |
| Center Wavelength λ [Bin 4;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1654 nm; max:1654.5 nm |
| Center Wavelength λ [Bin 5;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1654.5 nm; max:1655 nm |
| Center Wavelength λ [Bin 6;Tc=65℃;Wavelengths are categorized into predefined bins.] | min:1652.9 nm; max:1653.4 nm |
Applications
Sensing
Key Features
Low Threshold High Reliability High Power
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Supplier Information
Suzhou Dingxin Optoelectronic Technology Co., Ltd. is dedicated to the R&D and manufacturing of high-performance integrated optical chips. It possesses an industry-leading compound semiconductor process line supporting 3/4/6-inch wafer mass production, with capabilities covering chip design, crystal material growth, wafer fabrication, testing and packaging, providing one-stop solutions from wafer to device. Adopting an IDM model, the company enforces strict reliability standards. Its product portfolio includes EML, communication DFB, silicon photonics DFB, sensing, narrow linewidth laser chips, etc., applied in telecom, datacom, LiDAR, methane detection, and offers customized design and foundry services.
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