Zinc oxide ZnO
Zinc oxide (ZnO) is a very good substrate material for GaN thin films. It has an exciton binding energy of 60mev and a bandwidth of 3.73ev at room temperature, making it a luminescent material for ultraviolet and visible light. At the same time, due to its transparent visible region, large electromechanical coupling coefficient, and the ability to adsorb and analyze gas molecules on its surface, it is expected to be used in energy limiters with high peak energy, large-diameter and high-quality GaN substrates, and future 5GHz. It has been widely used in wireless communication, high-electric field equipment, high-temperature high-energy electronic devices, high-electric field equipment, high-temperature high-energy electronic devices, etc.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Crystal structure | hexagonal |
| Lattice constant | a=3.252Å , c=5.313Å |
| density | 5.7 (g/cm 3 ) |
| growth method | Hydrothermal |
| hardness | 4 (mohs) |
| melting point | 1975°C |
| Thermal expansion coefficient | 6.5 x 10 -6 /°C//a , 3.7 x 10 -6 /°C//c |
| heat capacity | 0.125 cal/gm |
| Thermoelectric constant [@300℃] | 1200mv/k @ 300℃ |
| thermal conductivity | 0.006 cal/cm/k |
| Through range [>50% at 2mm] | 0.4-0.6um ＞ 50% at 2mm |
| crystal direction | <0001>, <11-20>, <10-10>±0.5º |
| Dimensions | 25×25×0.5mm, 10×10×0.5mm, 10×5×0.5mm, 5×5×0.5mmSubstrates with special directions and sizes can be customized according to customer needs |
| Surface roughness Ra | Ra≦5Å can provide atomic particle microscope (AFM) test report |
| polishing | single or double sided |
| Package | Class 100 clean bag, Class 1000 ultra-clean room |
Datasheet
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