LaAlO3 Lanthanum Aluminum Acid
LaAlO3 LaAlO3 lanthanum aluminate acid is a high-temperature superconducting single crystal substrate material. It is a good substrate material for the epitaxial growth of high-temperature superconducting thin films and giant magnetic thin films, and its excellent dielectric properties are suitable for low loss microwave amplification devices and dielectric resonance applications.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Molecular formula | LaAlO3 |
| Growing directions | Czochralski |
| Crystal structure | Hexagonal |
| Lattice constant | a = 5.357Åc = 13.22Å |
| Hardness | 6.5 Mohs |
| Density | 6.52g/cm3 |
| Melting point | 2080℃ |
| Dielectric constant ε | ε=21 |
| Thermal expansion coefficient to heat | 10×10-6/℃ |
| Loss tangent | ～3×10-4@300K,～0.6×10-4@77K |
| Size | Maximum diameter of 76.2mm (3 inches) |
| Thickness | The 0.5mm is customizable |
| Polishing | One-sided throw or two-sided throw |
| Crystal orientation | <100><110><111> |
| Surface roughness Ra | Ra≤1nm |
| Crystal direction accuracy | ±0.2° |
| Positioning edge accuracy | ± 2° (special requirements up to within 1° /) |
| Crystallization Angle | customizable |
Applications
Key Features
Datasheet
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