Aluminum Nitride AlN
Aluminum nitride is a material with high thermal conductivity and high electrical insulation. Since the thermal conductivity is close to SI, it is widely used as a component for semiconductor manufacturing equipment. Aluminum nitride is an ultra-wide bandgap semiconductor material with great application potential. It has many excellent properties, such as its bandgap width as high as 6.2eV, high breakdown field strength, high saturation electron mobility, high chemical and thermal stability , and high thermal conductivity, radiation resistance and other excellent properties, so aluminum nitride is the best substrate material for ultraviolet/deep ultraviolet LEDs and ultraviolet LDs, and is also an ideal substrate material for high-power, high-frequency electronic devices. In addition, aluminum nitride has excellent piezoelectricity, high surface acoustic wave propagation velocity and high electromechanical coupling coefficient, and is the preferred piezoelectric material for GHz surface acoustic wave devices. The types are sapphire-based aluminum nitride, silicon-based aluminum nitride, and diamond-based aluminum nitride.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Density | 3.3 g/cm 3 |
| Elastic modulus | 320 GPa |
| Bending strength | 350 MPa |
| Hardness | 13 GPa |
| Fracture toughness | 3 MPa√m |
| Coefficient of thermal expansion | 4.0 ×10 -6 /K |
| Thermal shock resistance | 400 K |
| Thermal conductivity | 160 W/m・K |
| Electrical resistance value | 1014 Ω・cm |
| Insulation endurance | >15 kV/mm |
| Dielectric constant | 9 |
| Dielectric loss | 10 ×10 -4 |
| size | 10*10*0.5 or customized |
| polishing | Single Throw/Double Throw |
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Datasheet
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Supplier Information
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