10G Intensity modulator JDSU X5/Z5
The X5 and Z5 are 10Gbps intensity modulators,single GPO RF port;4.5dB low insertion loss,extinction ratio greater than 30dB,extinction ratio can exceed 40dB or 50dB,low drive voltage.The biggest difference is that the latter has fixed chirp. JDSU X5 and Z5 single drive 10 Gb/s modulators with integrated photodiode are ideally suited for use in long reach (LR)/very long reach (VR) Metro applications as well as in long haul (LH) transmission. The X5 is a fixed zero-chirp solution and the Z5 is a fixed ±0.7 chirp solution, both packaged identically. The small package form factor makes the X5/Z5 compatible with the 300 pin MSA transponder footprint. The X5 and Z5 modulators operate over the C and L band. Their low drive voltages make them compatible with low power dissipating driver solutions such as GaAs driver technology. In addition to providing bias control feedback, the new enhanced photodiode is capable of power monitoring for control of the transmitter’s modulated output power.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chirp (alpha parameter) | typical: ±0.7 |
| Optical insertion loss (BOL) [Measured at peak of DC bias transmission with no RF input and no optical connectors.] | typical:4.5 dB |
| Optical return loss (input and output ports) | typical:40 dB |
| Optical on/off extinction ratio [Low frequency] | typical:27 dB |
| Optical on/off extinction ratio [PRBS / For PRBS signals of up to 2³¹−1 and at bit rates up to 12.5 Gb/s. Measurement is based on an optimized set up.] | typical:15 dB |
| E/O bandwidth [-3 dB electrical, linear fit 2 to 15 GHz] | typical:12 GHz |
| S11 (130 MHz to 10 GHz) | typical:10 dB |
| Drive voltage (RF port) [Maximum driving voltage required to achieve 15 dB ER for 12.5 Gb/s 2³¹−1 PRBS signal over the operating wavelength and temperature ranges.] | typical:4.5 V |
| Vπ bias port [40 kHz] | typical:2.5 V |
| Bias voltage range [Maximum voltage range required to maintain optimum bias point over life and temperature.] | typical:-15 to 15 V |
| RF port resistance [DC] | typical:40 Ω |
| Bias port resistance [DC] | typical:1 MΩ |
| Photodetector extinction ratio [ER=10*log(Imax/Imin): Imax=PD current with modulator biased to maximum output power, Imin=PD current with modulator biased to minimum output power.] | typical:6 dB |
| Photodetector O/E bandwidth | typical:100 kHz |
| Photodetector responsivity [referred to output power] | typical:20 mA/W |
| Photodetector phase tracking error [Tracking error is the difference in phase between the modulator output power transfer function and the photodetector output current transfer function.] | typical:-5 to 5° |
| Photodetector dark current [at -5 V, room temperature] | typical:5 nA |
| ΔR/ΔT [The change in responsivity with temperature can be improved from the values given by employing passive thermal compensation.] | typical:±0.2 dB |
| ΔR/Δλ [Over C or L band. This can be calibrated for a given laser frequency.] | typical:±0.3 dB |
Applications
Key Features
Datasheet
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