ZnSe+Cr:ZnSe+ZnSe
Our ZnSe+Cr:ZnSe+ZnSe bonded crystal is formed by bonding pure ZnSe to both ends of Cr:ZnSe, effectively improving the overall performance of the Cr:ZnSe laser. The thermal conductivity of Cr:ZnSe is 14W/cm/°K@20°C, and that of ZnSe is 18W/m/K. Bonding the two ends to form ZnSe+Cr:ZnSe+ZnSe reduces thermal effects in Cr:ZnSe, decreases thermal lensing during laser pumping, improves beam quality, increases output stability and extends laser service life. Other advantages include broad tunability (emission from 2.1-3.1μm), a larger gain cross section (σ emission ~9 × 10⁻¹⁹ cm²), and minimal excited-state absorption because spin transitions to upper excited states are forbidden. Crylink uses surface-activated bonding, a bonding technology performed at low or room temperature and characterized by surface cleaning and activation. Bombardment of the bonding surfaces with fast atoms or an ion beam before bonding effectively increases bonding strength and enables high-quality bonding between inorganic materials, metals and semiconductor materials. Compared with high-temperature thermal bonding, surface-activated bonding provides greater interfacial bonding strength and better control of optical absorption loss and surface-figure change. Impurities on thermally diffusion-bonded surfaces cannot be removed and remain trapped at the bonded interface. Surface-activated bonding can remove polishing residues, organic contamination and surface oxide layers, break material chemical bonds and increase activation energy. The manufactured ZnSe+Cr:ZnSe+ZnSe bonded crystals have high bond strength, low absorption loss at the bonded interface (generally below 20ppm), and small surface-figure changes at the interface (surface figure <lamda/8 after bonding). They can be made as rods, slabs, waveguides or sandwich structures. Various coatings are available on the two ends, such as AR@2300~2500nm on the end faces. ZnSe+Cr:ZnSe+ZnSe bonded crystals are widely used in optical communication, pollutant-gas detection and industrial combustion-product testing.
Overview
Specifications
| Parameter | Value |
|---|---|
| concentrations [Materials:Cr:ZnSe] | (1~9)*10¹⁸/cm³ |
| Structure [Materials:ZnSe / Structure;Cr:ZnSe:Rods/Slabs/Sandwich/Waveguide/ / Structure;ZnSe:Rods/Slabs/Sandwich/Waveguide/] | Rods/Slabs/Sandwich/Waveguide/ |
| Structure [Materials:Cr:ZnSe / Structure;ZnSe:Rods/Slabs/Sandwich/Waveguide/] | Rods/Slabs/Sandwich/Waveguide/ |
| Structure [Materials:ZnSe / Structure;ZnSe:Rods/Slabs/Sandwich/Waveguide/ / Structure;Cr:ZnSe:Rods/Slabs/Sandwich/Waveguide/] | Rods/Slabs/Sandwich/Waveguide/ |
| End-face Configuration [Materials:ZnSe / End-face Configuration;Cr:ZnSe:Flat/Convex/Wedge / End-face Configuration;ZnSe:Flat/Convex/Wedge] | Flat/Convex/Wedge |
| End-face Configuration [Materials:Cr:ZnSe / End-face Configuration;ZnSe:Flat/Convex/Wedge] | Flat/Convex/Wedge |
| End-face Configuration [Materials:ZnSe / End-face Configuration;ZnSe:Flat/Convex/Wedge / End-face Configuration;Cr:ZnSe:Flat/Convex/Wedge] | Flat/Convex/Wedge |
| Side Configuration [Materials:ZnSe / Side Configuration;Cr:ZnSe:Polish/Fine Ground / Side Configuration;ZnSe:Polish/Fine Ground] | Polish/Fine Ground |
| Side Configuration [Materials:Cr:ZnSe / Side Configuration;ZnSe:Polish/Fine Ground] | Polish/Fine Ground |
| Side Configuration [Materials:ZnSe / Side Configuration;ZnSe:Polish/Fine Ground / Side Configuration;Cr:ZnSe:Polish/Fine Ground] | Polish/Fine Ground |
| Coating available [Materials:ZnSe / Coating available;ZnSe:AR@2300~2500nm / @2300~2500nm] | AR@2300~2500nm |
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