H-KTP Pockels Cell With Water Cooling Product Attributes
H-KTP crystal is grown by hydrothermal method, which overcomes the "Gray Track" phenomenon, the most common defect of common fused salt KTP crystal. It has the ability of high anti-laser damage threshold and high anti-gray mark, and can be steadily applied to the laser system with high power, high repetition frequency and high conversion efficiency for a long time. H-KTP crystal has a good electro-optical effect and can be used for EO Q-switch and EO modulation switches. H-KTP Pockels Cell with Water-cooling structure can be applied to higher power up to 300W. The high damage threshold of H-KTP pockels cell with water-cooling is up to 450mw/cm2(at 1064nm TEM00 10 ns,10 hz), Maximum average energy density is 4kW/cm2 at 532nm, besides, the high conversion effciency is up to 80%(depending on crystal device size and laser system) and the low conductivity is 10-10/Ωcm. It is the single domain structure and the low absorption rate is <2000ppm/cm at 532mm, <150ppm/cm at 1064mm. H-KTP crystal has been widely used in laser frequency doubling, electro-optical modulation and electro-optical Q switching,optical parametric oscillation amplification, quasi- phase matching and other fields. H-KTP Crystal EO Cells has the advantages of low insertion loss, low half-wave voltage, not deliquescence, wide light transmission band, no piezoelectric ringing effect and wide automatic temperature compensation. It can be used for up to 100W quasi-continuous laser output, it is customized for water-cooling H-KTP EO Q-switch according to your requiry. If you wish to find more suitable productions for your application please contact with us. Coupletech provides many kinds of EO Q-Switches. In the time, Coupletech also provides Laser Component, Pockels Cell Driver, Optical Element and Polarization Optics.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Model No. | CPKPC-04-W |
| Brand | Coupletech |
| Maximum Average Energy Density [@532nm] | 4kW/cm2 @532nm |
| Wavefront Distortion [@633nm] | ＜λ/8 @633nm |
| Aperture | 3.6mm |
| Flatness [@633nm] | ＜λ/8 @633nm |
| Surface Quality | 10/5 |
| Parallelism | 20 Arc Sec. |
| COATINGS [@1064&532nm] | AR/AR@1064&532nm |
| Perpendicularity | 5 Arc Min. |
| Antireflection Damage Threshold [@1064nm,TEM00,10ns,10Hz] | )＞500MW/cm2 (@1064nm,TEM00,10ns,10Hz |
Datasheet
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