Silicon PD Chip -WS9G-01C
Silicon photodetectors with high sensitivity and low dark current, and silicon PIN photodiodes for high-speed applications
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Overview
Specifications
| Parameter | Value |
|---|---|
| Active | 2620 x 1100±15 µm |
| Chip width | 1280 µm |
| Chip length | 2800 µm |
| Chip height | Min ：125 µm； Typical ：150 µm； Max ：175 µm |
| Pad N(Cathode) | Typical ：150 µm |
| Pad P(Anode) | Typical ：115 µm |
| Forward Voltage Vf [Ta=25 ℃；If=10mA, H=0] | Min ：0.5 V； Max ：1.3 V |
| Reverse Voltage V br [Ta=25 ℃；Ir=100μA, H=0] | Min ：35 V |
| Reverse Dark Current Id [Ta=25 ℃；Vr=10V] | Max ：10 |
| Sensitive Wavelength Range λp [Ta=25 ℃] | Min ：400 nm； Typical ：940 nm； Max ：1100 nm |
| Capacitance Cj [Ta=25 ℃；VR=3V, f=1MHz] | Typical ：20 pF |
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