Silicon PD Chip -WS59-10C
Silicon photodetectors with high sensitivity and low dark current, and silicon PIN photodiodes for high-speed applications
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Overview
Specifications
| Parameter | Value |
|---|---|
| Chip size | 28mil ×28mil (±1.5mil) |
| Thickness | 12mil ±0.4mil |
| Active area | 22mil ×22mil (±1.0mil) |
| Electrode size | 6mil ×6mil |
| Forward Voltage VF [IF=10mA, H=0] | Min ：0.5 V； Max ：1.2 V |
| Reverse Breakdown Voltage VBR [IR=100μA, H=0] | Min ：35 V |
| Reverse Dark Current ID [VR=10V, H=0] | Max ：10 |
| Capacitance CJ [VR=3V, F=1 MHz] | Typical ：9 pF |
| Sensitive Wavelength Peak λp | Min ：400 nm； Typical ：940 nm； Max ：1100 nm |
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