Silicon Carbide Lapping Slurry
(1) The product, used together with a cast iron plate, achieves a high material removal rate while maintaining the quality of silicon carbide wafers (Warp value, bow, TTV); (2) The product provides excellent rust prevention; (3) The product keeps the diamond abrasive stably suspended, with no obvious settling after long-term storage; (4) Strict quality control ensures product quality consistency and stability. (1) The product, used together with a dedicated silicon carbide fine polishing pad, achieves a high removal rate and improves efficiency; (2) The surface quality of silicon carbide wafers after fine polishing is high (roughness, scratches, subsurface damage layer and other parameters); (3) Water-soluble carrier formula with good cleaning performance; (4) Good suspension stability of the product; (5) Compared with conventional water-based formulas, the product provides better lubrication performance.
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Overview
Specifications
| Parameter | Value |
|---|---|
| SiC Particle Size Specification | D50=2-4μm |
| SiC Abrasive Type | Single-crystal diamond |
| SiC Property | Stable suspension, water-soluble carrier |
| SiC Particle Size Specification | D50=2-4μm / D50=0-1μm / D50=0.2μm |
| SiC Abrasive Type | Polycrystalline / quasi-polycrystalline / quasi-polycrystalline |
| SiC Property | Stable suspension, water-soluble carrier |
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