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Photonics Source provides 543 products. Download datasheets, request quotes, and compare function, price, and availability.
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888nm 120W High Power Wavelength-Stabilized Semiconductor Laser K888BL9RN-120.0W
Output Power: 120W Center Wavelength: 888±1nm Spectral Width (FWHM): 0.5nm Wavelength Temperature Coefficient: 0.03nm/℃ Brightness (95% Energy NA): 0.17 -
878.6nm 90W High Power Wavelength-Stabilized Semiconductor Laser K878BA5RN-90.00W
Output Power (Po): ≥90W Center Wavelength (λc): 878.6±1nm Spectral Width FWHM (△λ): 0.5nm Wavelength Temperature Coefficient (△λ/△T): 0.03nm/°C Electro-Optical Conversion Efficiency (PE): 50% -
K878BL9RN-170.0W
Output Power: Min:170W Center Wavelength: 878.6±1nm Spectral Width (FWHM): Typ:0.5nm Wavelength Temperature Drift Coefficient: Typ:0.03nm/℃ Brightness (95% Energy NA): 0.17 -
K878BL9RN-120.0W 878.6nm 120W High-Power Wavelength-Stabilized Semiconductor Laser
Output Power (W): ≥120 Center Wavelength (nm): 878.6±1 Spectral width (FWHM) (nm): 0.5 Wavelength Temperature Coefficient (nm/℃): 0.03 Brightness (95% Energy NA): 0.17 -
K878BNLRN-65.00W 878.6nm 65W High Power Wavelength-Stabilized Semiconductor Laser
Model: K878BNLRN-65.00W Test Conditions: 65W@25°C Output Power (Minimum): 65W Center Wavelength (Typical): 878.6±1nm Spectral Width FWHM (Typical): 0.5nm -
830nm 2W Fiber-Coupled Semiconductor Laser (K830F02FN-2.000W)
Output Power: ≥2W Center Wavelength: 830±10nm Spectral Width (FWHM): 6nm Wavelength Temperature Coefficient: 0.3nm/°C Electro-optical Efficiency: 45% -
830nm 1W 光纤耦合半导体激光器 K830F02FN-1.000W
Output Power (W): ≥1 Center Wavelength (nm): 830±10 Spectral Width FWHM (nm): 6 Wavelength Temperature Drift Coefficient (nm/°C): 0.3 Electro-Optical Efficiency (%): 40 -
K808F14CC-8.000W 808nm 8W Multi-function Detachable Fiber Output Semiconductor Laser
Output Power (Po): ≥8W Center Wavelength (λc): 808±10nm Wavelength Temperature Coefficient (△λ/△T): 0.3nm/°C Electro-Optical Efficiency (PE): 40% Threshold Current (Ith): 1.8A -
808nm 8W 光纤耦合半导体激光器 K808DB2RN-8.000W
Output Power Po (W): ≥8 Center Wavelength λc (nm): 808±3 Spectral Width (FWHM) Δλ (nm): 6 Wavelength Temperature Coefficient Δλ/ΔT (nm/℃): 0.3 Electro-Optical Conversion Efficiency PE (%): 46 -
808nm 70W Fiber-Coupled Semiconductor Laser (Model: K808DA5RN-70.00W)
Model: K808DA5RN-70.00W Test Conditions: Po=70W@25°C Output Power: 70W(Min.) Center Wavelength: 808±3nm Spectral Width (FWHM): 6nm(Typ.) -
K808DAHRN-25.00W 808nm 25W Fiber-Coupled Semiconductor Laser
Output Power (Po): ≥25W Center Wavelength (λc): 808±3nm Spectral Width (FWHM) (Δλ): 6nm (Typ.) Temperature Drift Coefficient (Δλ/ΔT): 0.3nm/°C (Typ.) Electro-Optical Efficiency (PE): 48% (Typ.) -
808nm 150W 高功率光纤耦合半导体激光器 K808DL9RN-150.0W
Output Power: ≥150W Center Wavelength: 808±3nm Spectral Width (FWHM): 6nm Wavelength Temperature Coefficient: 0.3nm/°C Electro-optical Conversion Efficiency: 42% -
793nm 8W光纤耦合半导体激光器 K793DB2RN-8.000WN0N-10522F20EFF
Output Power: ≥8.0W Center Wavelength: 793±3nm Spectral Width (FWHM): 3nm(Typ.), 7nm(Max.) Wavelength Temperature Coefficient: 0.3nm/℃(Typ.) Wavelength Current Coefficient: 0.6nm/A(Typ.) -
793nm 80W 光纤耦合半导体激光器（K793DA5RN-80.00WN0N-20022F20EFF）
Output Power (Po): ≥80.0W Center Wavelength (λc): 793±3nm Spectral Width (FWHM, △λ): 3nm(Typ.)/7nm(Max.) Wavelength Temperature Coefficient (△λ/△T): 0.3nm/°C Wavelength Current Coefficient (△λ/△I): 0.6nm/A -
793nm 50W Fiber Coupled Diode Laser K793DA5RN-50.00WN0N-10522F20EFF
Output Power (W): ≥50.0W Center Wavelength (nm): 793±3nm Spectral Width FWHM (nm): Typ.:3nm; Max.:7nm Wavelength Temperature Coefficient (nm/℃): 0.3nm/℃ Wavelength Current Coefficient (nm/A): 0.6nm/A -
793nm 260W High Power Fiber Coupled Semiconductor Laser K793DN2RN-260.0WN0N-20022F20EFF (Standard)
Output Power (Po, Min): 260.0W Center Wavelength (λc, Typ.): 793±3nm Spectral Width FWHM (Δλ, Typ.): 3nm Spectral Width FWHM (Δλ, Max): 7nm Wavelength Temperature Coefficient (Δλ/ΔT, Typ.): 0.3nm/°C -
793nm 22W 光纤耦合半导体激光器 (793nm 22W Fiber-Coupled Diode Laser)
Output Power (Po): ≥22.0W Center Wavelength (λc): 793±3nm Spectral Width FWHM (△λ): 3nm(Typ.)/7nm(Max.) Temperature Drift Coefficient (△λ/△T): 0.3nm/°C(Typ.) Current Drift Coefficient (△λ/△I): 0.6nm/A(Typ.) -
793nm 160W High Power Fiber Coupled Diode Laser (K793DL9RN-160.0WN0N-13522F20EFF)
Output Power (Po): ≥160.0W Center Wavelength (λc): 793±3nm Spectral Width FWHM (Δλ): Typ.3nm, ≤7nm Wavelength Temperature Coefficient (Δλ/ΔT): 0.3nm/°C (Typ.) Wavelength Current Coefficient (Δλ/ΔI): 0.6nm/A (Typ.) -
K785AFLWN-0.600W 785nm 600mW Butterfly Packaged Semiconductor Laser
Output Power (W): 0.6(Min.) Center Wavelength (nm): 785±0.5 Spectral width (FWHM) (nm): <0.1 Wavelength Temperature Coefficient (nm/°C): 0.01 Electro-Optical Conversion Efficiency (%): 30 -
635nm 5W Fiber Coupled Semiconductor Laser (K635FA5FN-5.000W)
Output Power Po (W): ≥5 Center Wavelength λc (nm): 635±10 Temperature Drift Coefficient Δλ/ΔT (nm/°C): 0.3 Electro-Optical Efficiency PE (%): 20 Threshold Current Ith (A): 0.5