635nm Semiconductor Laser with High Power Stability
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Specifications
| Parameter | Value |
|---|---|
| Wavelengths | 635nm |
| Center Wavelength Drift | ±0.5nm |
| Operating Mode | CW |
| Optical Power | 1-200mW |
| Power Stability | 0.5% |
| Emission Mode | Single-Mode |
| M-Squared Factor | ＜1.5 |
| Beam Divergence Angle | ＜1mrad |
| Power Stabilization Time | ＜5min |
| Operating Temperature | 10-35℃ |
| Power Supply Parameters | 90-264Vac |
| Power Supply Parameters | 127-370Vdc |
| Modulation - Large-Signal Bandwidth [Input signal: 0.2V to 2.2V square wave] | 4.67MHz |
| Modulation - Small-Signal Bandwidth [Input: 1V DC plus 200mV AC square wave] | 7.61MHz |
| Power Supply Dimensions | ≤110mm (length) ×104mm (width) ×67mm (height) |
| Laser head dimensions | ≤64mm (length) ×66mm (width) ×34mm (height) |
| Lifetime | 10000 h |
| Warranty | One year |
Datasheet
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