2000nm Band Semiconductor Laser with High Power Stability
Customizable 2000nm-band (1940nm-2000nm) semiconductors with various power options and high power stability
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Overview
Specifications
| Parameter | Value |
|---|---|
| Wavelengths | 1940nm-2000nm |
| Center Wavelength Drift | ±1nm |
| Operating Mode | CW/ Modulation |
| Optical Power | 1-30mW |
| Power Stability [（0.5% Optional ）] | 1%（0.5% Optional ） |
| Emission Mode | Single-mode/multimode free-space or fiber output |
| M-Squared Factor [（＜1.2 Optional ）] | ＜3/＜1.5（＜1.2 Optional ） |
| Beam Divergence Angle [（ Customizable ）] | ＜1mrad（ Customizable ） |
| Power Stabilization Time | ＜5min |
| Operating Temperature [（-40 to +85℃ Optional ）] | 10-35℃（-40至+85℃可选） |
| Power Supply Parameters [(Power supplies with other parameters can be customized)] | 90-264Vac |
| Power Supply Parameters [(Power supplies with other parameters can be customized)] | 127-370Vdc |
| Modulation - Large-Signal Bandwidth [Input signal: 0.2V to 2.2V square wave] | 4.67MHz |
| Modulation - Small-Signal Bandwidth [Input: 1V DC plus 200mV AC square wave] | 7.61MHz |
| Power Supply Dimensions | ≤110mm (length) ×104mm (width) ×67mm (height) |
| Laser head dimensions | ≤64mm (length) ×66mm (width) ×34mm (height) |
| Lifetime | 10000 h |
| Warranty | One year |
Datasheet
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Supplier Information
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