25G NLAN EML

25G NLAN EML

Supplier
Etern-laser
Category
Laser Diodes
Origin
China

Dingxin Optoelectronics has independently developed an electroabsorption distributed-feedback laser diode chip. Each chip has bandwidth exceeding 25GHz for 25G transport-network transmission, with high bandwidth, high power and low threshold. Wavelength can be customized.

Specification Snapshot
Threshold Current Ith [CW;Tc=55℃]
typical:12 mA
Center Wavelength λ01 [CW, Iop=80mA;Tc=55℃;λ0]
min:1292.27 nm; max:1292.77 nm
Center Wavelength λ02 [CW, Iop=80mA;Tc=55℃;λ0]
min:1292.78 nm; max:1293.27 nm
Center Wavelength λ03 [CW, Iop=80mA;Tc=55℃;λ0]
min:1293.28 nm; max:1293.77 nm
Center Wavelength λ04 [CW, Iop=80mA;Tc=55℃;λ0]
min:1293.78 nm; max:1294.37 nm
Center Wavelength λ11 [CW, Iop=80mA;Tc=55℃;λ1]
min:1294.51 nm; max:1295.01 nm
Request a Quote Download Datasheet
Save to Favorites Save to Favorites

Overview

Dingxin Optoelectronics has independently developed an electroabsorption distributed-feedback laser diode chip. Each chip has bandwidth exceeding 25GHz for 25G transport-network transmission, with high bandwidth, high power and low threshold. Wavelength can be customized.

Specifications

ParameterValue
Threshold Current Ith [CW;Tc=55℃]typical:12 mA
Optical Output Power [CW,Iop=80mA;Tc=55℃]min:12 mW
Laser Forward Voltage Vf [CW,Iop=80mA;Tc=55℃]max:1.8 V
Center Wavelength λ01 [CW, Iop=80mA;Tc=55℃;λ0]min:1292.27 nm; max:1292.77 nm
Center Wavelength λ02 [CW, Iop=80mA;Tc=55℃;λ0]min:1292.78 nm; max:1293.27 nm
Center Wavelength λ03 [CW, Iop=80mA;Tc=55℃;λ0]min:1293.28 nm; max:1293.77 nm
Center Wavelength λ04 [CW, Iop=80mA;Tc=55℃;λ0]min:1293.78 nm; max:1294.37 nm
Center Wavelength λ11 [CW, Iop=80mA;Tc=55℃;λ1]min:1294.51 nm; max:1295.01 nm
Center Wavelength λ12 [CW, Iop=80mA;Tc=55℃;λ1]min:1295.02 nm; max:1295.51 nm
Center Wavelength λ13 [CW, Iop=80mA;Tc=55℃;λ1]min:1295.52 nm; max:1296.01 nm
Center Wavelength λ14 [CW, Iop=80mA;Tc=55℃;λ1]min:1296.02 nm; max:1296.61 nm
Center Wavelength λ21 [CW, Iop=80mA;Tc=55℃;λ2]min:1296.75 nm; max:1297.25 nm
Center Wavelength λ22 [CW, Iop=80mA;Tc=55℃;λ2]min:1297.26 nm; max:1297.75 nm
Center Wavelength λ23 [CW, Iop=80mA;Tc=55℃;λ2]min:1297.76 nm; max:1298.25 nm
Center Wavelength λ24 [CW, Iop=80mA;Tc=55℃;λ2]min:1298.26 nm; max:1298.85 nm
Center Wavelength λ31 [CW, Iop=80mA;Tc=55℃;λ3]min:1299.00 nm; max:1299.5 nm
Center Wavelength λ32 [CW, Iop=80mA;Tc=55℃;λ3]min:1299.51 nm; max:1300.0 nm
Center Wavelength λ33 [CW, Iop=80mA;Tc=55℃;λ3]min:1300.01 nm; max:1300.5 nm
Center Wavelength λ34 [CW, Iop=80mA;Tc=55℃;λ3]min:1300.51 nm; max:1301.10 nm
Side-mode Suppression Ratio SMSR [CW,Iop=80mA;Tc=55℃]min:35 dB; typical:45 dB
Static Extinction Ratio DCER [Vea=-2V;Tc=55℃]min:8 dB
3dB Bandwidth BW [Iop=80mA Vea=Best linearity point;Tc=55℃]min:25 GHz
Far-field Angle (FWHM) θ// [Tc=55℃]typical:28 Deg
Far-field Angle (FWHM) θ⊥ [Tc=55℃]typical:38 Deg

Applications

Data Communication Ethernet Communication

Key Features

Monolithically Integrated Chip with DFB Laser and EA Modulator High Extinction Ratio High Modulated Rate Low Threshold High Reliability

Datasheet

Please provide your email to download the datasheet.

Your name
Email Address

Invalid email format. Please try again.

Send Request

Supplier Information

Et
Etern-laser
View Supplier →
Suzhou Dingxin Optoelectronic Technology Co., Ltd. is dedicated to the R&D and manufacturing of high-performance integrated optical chips. It possesses an industry-leading compound semiconductor process line supporting 3/4/6-inch wafer mass production, with capabilities covering chip design, crystal material growth, wafer fabrication, testing and packaging, providing one-stop solutions from wafer to device. Adopting an IDM model, the company enforces strict reliability standards. Its product portfolio includes EML, communication DFB, silicon photonics DFB, sensing, narrow linewidth laser chips, etc., applied in telecom, datacom, LiDAR, methane detection, and offers customized design and foundry services.

Request a Quote

Our team responds within 24–48 hours
25G NLAN EML
Etern-laser · Laser Diodes
Direct from Manufacturer
Your inquiry will be sent directly to the manufacturer
Photonics Source Platform
We handles the inquiry on your behalf
Your information is protected and will never be shared without consent.
Contact Us

Loading...

GetExperimental Plan

Name

Phone

+86

Organization

Use Case

AI Parametric Selection
Smart Match · Precise Recs
Enter Specifications
AI Smart Matching
Get Best Matches
Skip Manual Comparison
Find Best Solutions Fast
Select Now →