10G DML DR010GCM04C01
Etern-laser offers single-mode edge-emitting directly modulated laser (DML) chips with modulation rates of 10Gb/s across an uncooled industrial temperature range. An Al-containing multiple-quantum-well active structure and dual-trench ridge-waveguide process provide low threshold, high bandwidth, high optical-output efficiency and high reliability. Every chip undergoes a strict Certification process before shipment for high yield and quality.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Operating Temperature | min:-40 °C; max:85 °C |
| Threshold Current Ith [CW 25°C] | typical:7 mA; max:12 mA |
| Threshold Current Ith [CW 85°C] | typical:15 mA; max:25 mA |
| Optical Output Power [If=Ith+20mA, 25°C] | min:6 mW; typical:8 mW |
| Optical Output Power [If=Ith+20mA, 85°C] | min:4 mW; typical:5 mW |
| Slope Efficiency SE [If=Ith+20mA, 25°C] | min:0.3 mW/mA |
| Slope Efficiency SE [If=Ith+20mA, 85°C] | min:0.2 mW/mA |
| Kink [If=Ith+5mA~60mA] | max:20 % |
| Operating Current Iop [CW,Po=5mW 25°C] | typical:20 mA |
| Operating Current Iop [CW,Po=5mW 85°C] | max:60 mA |
| Forward Voltage VF [If=Ith+20mA, 25°C] | typical:1.2 V; max:1.5 V |
| Forward Voltage VF [If=Ith+20mA, 85°C] | typical:1.3 V; max:1.6 V |
| Series Resistance Rs [If=Ith+20mA] | typical:7 Ω; max:15 Ω |
| Center Wavelength λ [If=Ith+20mA Tc=-40°C~85°C] | min:1321 nm; typical:1331 nm; max:1341 nm |
| Spectral Width (-20 dB) Δλ [If=Ith+20mA@-20dB] | typical:0.4 nm; max:1 nm |
| Wavelength Temperature Coefficient Δλ/ΔT [If=Ith+20mA Tc=-40°C~85°C] | typical:0.09 nm/°C |
| Side-mode Suppression Ratio SMSR [If=Ith+20mA Tc=-40°C~85°C] | min:35 dB; typical:45 dB |
| Relaxation Oscillation Frequency fR [Ibias=Ith+20mA@-3dB] | min:10 GHz |
| Far-field Angle (FWHM) θ// [If=Ith+20mA, 25°C] | typical:25 Deg |
| Far-field Angle (FWHM) θ⊥ [If=Ith+20mA, 25°C] | typical:30 Deg |
Applications
Key Features
Datasheet
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Supplier Information
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