100G EML
Dingxin Optoelectronics has independently developed an electroabsorption distributed-feedback laser diode chip. Each chip has bandwidth exceeding 35GHz for 100G PAM4 requirements. It offers high bandwidth, high power and low threshold, with wavelength coverage of 1271-1331nm.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Threshold Current Ith [CW；Tc=45℃] | typical:12 mA; max:20 mA |
| Optical Output Power [CW,Iop=80mA；Tc=45℃] | min:12 mW |
| Laser Forward Voltage Vf [CW,Iop=80mA；Tc=45℃] | max:2.0 V |
| Center Wavelength λ0 [CW, Iop=80mA；Tc=45℃] | min:1269 nm; typical:1271 nm; max:1274 nm |
| Center Wavelength λ1 [CW, Iop=80mA；Tc=45℃] | min:1289 nm; typical:1291 nm; max:1294 nm |
| Center Wavelength λ2 [CW, Iop=80mA；Tc=45℃] | min:1309 nm; typical:1311 nm; max:1314 nm |
| Center Wavelength λ3 [CW, Iop=80mA；Tc=45℃] | min:1329 nm; typical:1331 nm; max:1334 nm |
| Side-mode Suppression Ratio SMSR [CW,Iop=80mA；Tc=45℃] | min:35 dB; typical:45 dB |
| Static Extinction Ratio DCER [Vea=-2V；Tc=45℃] | min:9 dB |
| 3dB Bandwidth BW [Iop=80mA Vea=Best linearity point；Tc=45℃] | min:30 GHz |
| Far-field Angle (FWHM) θ// [Tc=45℃] | typical:28 Deg |
| Far-field Angle (FWHM) θ⊥ [Tc=45℃] | typical:38 Deg |
Applications
Key Features
Datasheet
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Supplier Information
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