Photodetector HTPF08D
The detector assembly product consists of a PIN detector chip and a transimpedance amplifier circuit with a low-noise GaAs-FET input stage. This product features low noise, high bandwidth, and low voltage responsivity variation. It is available in 8J/6J ceramic packages, as well as metal DIP-8-pin and metal DIP-14-pin housings. The fiber coupling method utilizes fully metallized fiber optic coupling, offering excellent hermeticity, long service life, and stable environmental performance.
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Overview
Specifications
| Parameter | Value |
|---|---|
| DC Potential Vd [Vcc=+5V,Vss=-5V] | -1.7~-1.4 V |
| Noise Voltage Vn [RL=50Ω] | ≤0.5 mV |
| Voltage Responsiveness Re [f=DC φe=(-23±0.2)dBm] | ≥0.34 μV/W |
| Bandwidth Bw [RL=50Ω φe=(-23±0.2)dBm] | ≥4 MHz |
| Sensitivity Sr [RL=50Ω f=(10±0.1)kHz] | ≤-49 dBm |
| Dynamic Range Dy [RL=50Ω f=(10±0.1)kHz] | ≥25 dB |
| Voltage Responsiveness Variation Ratio △Re [f=DC φe=(-23±0.2)dBm] | ≤1.5 % |
| DC Potential Change Rate △V [Vcc=+5V,Vss=-5V] | ≤1.5 mV/℃ |
| Transimpedance Rf | 400±5% |
| Wavelength λ | 1000~1650 nm |
| Operating Temperature Tw | -45~+70 ℃ |
| Storage Temperature Ts | -55~+85 ℃ |
Datasheet
Supplier Information
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