Silicon photomultiplier
A SiPM (silicon photomultiplier, also called a multipixel photon counter, MPPC) is an array of hundreds to tens of thousands of identical Geiger-Avalanche Photodiode (G-APD) cells, each approximately 1~100 μm in diameter, integrated in parallel on a monocrystalline silicon chip. Each cell is connected in series with a resistor of hundreds of kilohms to quench the large avalanche current promptly. All cells share a signal electrode and operate in Geiger mode, several volts above the cell breakdown voltage. Each silicon photomultiplier consists of many hundreds or thousands of APD cells, each comprising an APD in series with a high-value quenching resistor, connected in parallel as an area array. With reverse bias, generally tens of volts, a strong electric field forms in each APD depletion region. The source offers the simplified, explicitly imprecise explanation that an incoming photon undergoes Compton scattering with electron-hole pairs, releasing an electron or hole. High-energy carriers accelerate in the field and create many secondary carriers, producing an avalanche. The resulting increase in cell current increases the voltage drop across quenching resistor R and rapidly lowers the APD field, stopping the avalanche after a transient current pulse. Equal quenching resistances mean that cells theoretically produce equal pulses. Although APDs are analog devices, each cell behaves macroscopically as a logic element: output is “1” when a signal is present and “0” otherwise. Within the SiPM dynamic range, output current is proportional to the number of cells undergoing avalanches.
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Overview
Specifications
| Parameter | Value |
|---|---|
| Spectral response range λ | 320 to ~900 |
| Peak sensitivity wavelength λp [Depends on the die model] | 360~470（ Depends on the die model ） |
| Temperature for stable signal output [Ta=25℃±10℃] | typical:±5 ％ |
| Photosensitivity Rv | min:2.1×106；typical:2.6×106；max:3.2×106 |
| Rise Time | typical:2 ns |
| Photoresponse pulse FWHM | typical:4 ns |
| Photon counting frequency fc | max:80 MHz |
| Dark count rate (at recommended bias) DCR | typical:~400 KHz |
| Noise Equivalent Power NEP [Complete darkness] | typical:3 fw/Hz1/2 |
| Number of resolved photons for pulsed light (average) PNR | min:0.1 units；typical:20 units；max:47 units |
| Saturating incident optical flux Pin | typical:~100 nW |
Applications
Key Features
Datasheet
Supplier Information
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