ElFys PD25s Black‑Silicon Photodiode 170‑1100nm Photodetector
Published: 2026-09-14 15:46:11 Views: 11
The ElFys PD25s series photodetectors adopt ElFys‑patented Black Silicon Induced Junction technology, delivering excellent spectral response spanning deep‑ultraviolet, visible and near‑infrared bands for diverse high‑precision photometry applications. Sub‑variants including H, M, HG and MG are optimised for low‑capacitance, low‑dark‑current and high‑reverse‑bias guard‑ring operations respectively. Multiple packaging configurations are available to satisfy various system‑design requirements.
Key Product Features
Built upon patented black‑silicon induced‑junction chip technology, the PD25s series covers a spectral range of 170‑1100 nm and improves ultraviolet sensitivity compared with conventional silicon photodiodes. Differentiated sub‑models allow flexible component selection for engineering designs.
- Broad spectral response: deep‑UV, visible to near‑infrared (170‑1100 nm) with enhanced UV‑band photosensitivity
- PD25sH / PD25sHG (H‑variant): Optimised for low capacitance, ideal for high‑speed detection
- PD25sM / PD25sMG (M‑variant): Low dark‑current performance to minimise background measurement noise
- G‑suffix models (HG / MG): Integrated guard‑ring structure, enabling operation under high reverse‑bias voltage while maintaining low dark‑current levels
- 5 mm × 5 mm photosensitive area; chip dimension 6.0 × 6.0 mm for non‑guard‑ring versions and 6.3 × 6.3 mm for guard‑ring variants
- Multiple packaging choices: bare chip, demonstration PCB, TO‑8 header. Options include no‑window or Schott UV‑glass window; custom windows, optical filters and custom packaging services are supported
- Favourable angular responsivity, preserving high external quantum efficiency at large incident angles for non‑normal‑incidence optical systems
Model Overview
| Part Number | Photosensitive Area | Chip Dimension | Max Reverse Voltage | Guard Ring | Packaging Options | Window / Filter Options |
|---|---|---|---|---|---|---|
| PD25sH | 5.0 × 5.0 mm | 6.0 × 6.0 mm | 20 V | No | Bare chip, PCB, TO‑8 | No window / Schott UV‑glass |
| PD25sM | 5.0 × 5.0 mm | 6.0 × 6.0 mm | 20 V | No | Bare chip, PCB, TO‑8 | No window / Schott UV‑glass |
| PD25sHG | 5.0 × 5.0 mm | 6.3 × 6.3 mm | 100 V | Yes | Bare chip, PCB | No window |
| PD25sMG | 5.0 × 5.0 mm | 6.3 × 6.3 mm | 100 V | Yes | Bare chip, PCB | No window |
Key Optical & Electrical Characteristics
| Part Number | Spectral Response Range | Peak Wavelength | Max Dark Current @ VR=10 mV | Typical Capacitance @ VR=0V,100 kHz | Min Shunt Resistance | Max NEP @ λp |
|---|---|---|---|---|---|---|
| PD25sH / PD25sHG | 170‑1100 nm | 1040 nm | 700 pA | 110 pF | 14 MΩ | 4.4×10⁻¹⁴ W/√Hz |
| PD25sM / PD25sMG | 170‑1100 nm | 1010 nm | 30 pA | 370 pF | 330 MΩ | 9.2×10⁻¹⁵ W/√Hz |
Application Fields
- High‑precision Photometry: Broad‑band photometric measurement covering UV‑Vis‑NIR, spectroscopy systems
- UV‑Detection Equipment: Deep‑ultraviolet sensing, UV‑radiation monitoring and UV‑related experimental measurement
- Optical Instruments & Scientific Research: Laboratory spectrometers, optical test platforms and low‑light detection systems
- Industrial Optical Inspection: In‑line industrial light‑intensity monitoring and material optical‑property characterisation
- OEM Instrument Integration: Embedded implementation via bare‑chip, PCB‑mounted or TO‑8 packages for analytical instruments
About the Manufacturer
ElFys is a Finnish optoelectronic component company based in Espoo. It specialises in black‑silicon photodetector R&D and holds patents for Black Silicon Induced Junction technology. The company supplies standard photodiodes as well as custom chip and packaging solutions for research institutes and instrument manufacturers worldwide.
FAQ
Q1: What are the core differences between H‑model and M‑model PD25s?
A: PD25s‑H series features low capacitance, suited for high‑speed photoelectric acquisition. PD25s‑M series provides low dark current, optimised for faint‑light detection and lower system noise floor.
Q2: What does the G suffix stand for?
A: G denotes the guard‑ring design. It allows maximum 100 V reverse‑bias operation while suppressing dark current, suitable for detection scenarios requiring high reverse bias voltage.
Q3: What precautions apply when operating PD25s under UV light?
A: Long‑term deep‑UV irradiation below 240 nm can degrade detector performance. Degradation magnitude depends on total exposure dose. Window material selection alters real‑world spectral response and shall be fully evaluated in system design.
Q4: What packaging forms are available for PD25s?
A: Available packages include bare chip, demonstration PCB and TO‑8 header. The PCB version supports surface‑mount, through‑hole and wire‑soldering assembly. TO‑8 is equipped with Schott UV‑glass by default; alternative window materials and anti‑reflection coatings can be custom‑ordered.
Selection Notes
- Select H / HG variants for high‑speed measurement applications. Choose M / MG for faint‑light low‑noise measurement. Pick G‑suffix guard‑ring models if high reverse‑bias voltage is required.
- TO‑8 packaging is only offered for PD25sH and PD25sM. HG and MG guard‑ring versions are available only as bare chip or PCB‑mounted devices.
- Non‑guard‑ring PCB devices have anode (AN) and cathode (CAT) pins. Guard‑ring‑equipped variants add the guard‑ring (GR) pin. The guard‑ring terminal shall be properly grounded in circuit design.
